The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Jul. 26, 1989
Applicant:
Inventors:
Fabio Gualandris, Bergamo, IT;
Luisa Masini, Milan, IT;
Assignee:
SGS-Thomson Microelectronics S.r.l., Milan, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437235 ; 437231 ; 437238 ; 437978 ;
Abstract
A dielectric layer of first interconnection for electronic semiconductor devices, specifically CMOS circuits, comprises a first thickness of tetraethylorthosilicate which is overlaid by a layer of self-planarizing siloxane. That layer provides a surface structure which is permissive of the subsequent conventional masking and electric contact attaching steps.
Gualandris, Fabio. (1991). Dielectric layer of first interconnection for electronic semiconductor (U.S. Patent No. 5045504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5045504
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