The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Sep. 18, 1989
Toshirou Kodama, Yokohama, JP;
Satoru Kawai, Kawasaki, JP;
Yasuhiro Nasu, Kawasaki, JP;
Nobuyoshi Takagi, Kawasaki, JP;
Shintaro Yanagisawa, Atsugi, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A thin film transistor including a glass substrate and a gate electrode which is formed on the glass substrate. Source and drain electrodes are also provided. An insulating film covers at least the gate electrode and an amorphous semiconductor layer is formed on the insulating film. The semicondcutor layer includes a first portion having the source electrode formed thereon, a second portion having the drain electrode formed thereon, and a third portion formed between the first and second portions and located above the gate electrode, having a thin thickness which allows photolithographic light to permeate therethrough.