The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Jun. 26, 1990
Sailesh Chittipeddi, Whitehall, PA (US);
William T Cochran, New Tripoli, PA (US);
Michael J Kelly, Orefield, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A method of forming a transistor is disclosed. Conventional fabrication techniques direct an ion implantation beam toward a substrate upon which a gate has already been formed. If the gate stack is too low relative to the incident beam energy, the dopant species may channel thorugh the gate stack, adversely affecting transistor performance. The present invention prevents channeling through this gate by covering the gate with a protective layer before ion implantation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile