The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Nov. 17, 1988
Applicant:
Inventors:
Chris Eberspacher, Los Angeles, CA (US);
James H Ermer, Burbank, CA (US);
Kim W Mitchell, Granada Hill, CA (US);
Assignee:
Atlantic Richfield Company, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B05D / ;
U.S. Cl.
CPC ...
428620 ; 136264 ; 136265 ; 148 33 ; 423508 ; 427 76 ; 437-5 ; 437232 ;
Abstract
A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.