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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5043795 B1

PDFFull Text
Date of Patent:
Aug. 27, 1991

Filed:

Apr. 11, 1990

Semiconductor device

Applicant:
Inventors:

Yoshikazu Takahashi, Matumoto, JP;

Katuhiro Endo, Matumoto, JP;

Fumiaki Kirihata, Matumoto, JP;

Hideaki Kakiki, Matumoto, JP;

Assignee:

Fuji Electric Co., Ltd., Kawasaki, JP;

Attorney:

Brumbaugh, Graves, Donohue & Raymond

Primary Examiner:

Rolf Hille

Assistant Examiner:

David Ostrowski

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 79 ; 357 74 ; 357 68 ;
Abstract

Provided is a semiconductor device for power switching applications which utilizes a plurality of gate terminals provided in pressure contact with gate electrodes, the gate terminal/electrodes situated so as separate current flow therethrough at time of gate turn off into separate components, thereby reducing the transverse voltage drop of the gate electrode. In one embodiment, the invention is applied to a gate turn off (GTO) thyristor, and in another embodiment, towards a reverse conducting GTO thyristor.

Find Patent Forward Citations

Takahashi, Yoshikazu. (1991). Semiconductor device (U.S. Patent No. 5043795). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5043795

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