The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Aug. 13, 1990
Kenji Yamamoto, Miyagi, JP;
Yusuke Tanno, Yamamoto, JP;
Hiroshi Miura, Natori, JP;
Hideo Watanabe, Ogawara, JP;
Ricoh Company, Ltd., Tokyo, JP;
Ricoh Research Institute of General Electronics Co., Ltd., Natori, JP;
Tohoku Ricoh Co., Ltd., Miyagi, JP;
Abstract
An image sensor having a lower electrode disposed on a surface of a substrate; a multilayered amorphous silicon layer formed on the surface of the substrate so as to cover an end portion of the lower electrode; and an upper electrode formed on the surface of the substrate so as to cover an end portion of the amorphous silicon layer. An angle defined by an end surface of the end portion of the amorphous silicon layer and the surface of the substrate having the lower electrode disposed thereon is within a range of from 30.degree. to 60.degree. and a distance between edges of two neighboring layers of the amorphous silicon layer at the end portion of the amorphous silicon layer is equal to or less than 500.ANG..