The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Sep. 28, 1990
Applicant:
Inventor:
Saptharishi Sriram, Monroeville, PA (US);
Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 232 ; 357 16 ; 357 17 ;
Abstract
An undoped surface layer over and lattice matched to the n-channel layer between the gate contact and the spaced apart source and drain n+ regions in power FETs made of group III-V compounds minimizes surface effects that preclude such devices from operating efficiently at high voltages, and improves reliability. The undoped surface layer may be grown on the n-channel layer before the layer forming the n+ regions, or where the n+ regions can be formed in the undoped surface layer. The invention is especially suitable for GaAs MESFETs and HEMTs.