The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Nov. 02, 1990
Hikaru Hida, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The semiconductor device of the present invention includes on one and the same substrate a first transistor having a first semiconductor layer with high-impurity density on which is provided a second semiconductor layer with low-impurity density, where the first semiconductor layer being of N type and having electron affinity greater than that of the second semiconductor layer, and is equipped with a control electrode provided on the second semiconductor layer and at least two ohmic electrodes that are electrically connected to the first semiconductor layer on both sides of the control electrode, and a second transistor having a third semiconductor layer with low-impurity density provided on top of the second semiconductor layer on the first semiconductor layer, and is equipped with a control electrode provided on the third semiconductor layer and at least two ohmic electrodes that are electrically connected to the first semiconductor layer on both sides of the control electrode. Further, by setting the first semiconductor layer to be a P-type semiconductor having the sum of the electron affinity and the energy gap smaller than the sum of the electron affinity and the energy gap of the second semiconductor layer, there can be obtained a semiconductor using holes as carriers.