The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Aug. 17, 1989
Bernardus H Cornelissen, Bergeijk, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
An amplifier arrangement comprising a first (T1) and a second (T2) field-effect transistor of the same conductivity type and a driver circuit (Q1, Q2, Q3, T3, T4, T5, I) which is responsive to a signal to be amplified at the input terminals (3, 4) to drive the respective drain electrodes of the two field-effect transistors (T1, T2). A resistive element (R) is formed between the drain and the gate electrode of the first field-effect transistor (T1) and a capacitive element (C) is formed between the gate and the source electrode. Together with said elements (R, C) the first field-effect transistor (T1) constitutes a reactance circuit having an inductive character, which is arranged in parallel with the parasitic gate-source capacitance of the second field-effect transistor (T2). This results in an improved step-function response and edge steepness of step-function signals on the output terminal (5), i.e., at the drain electrode of the second field-effect transistor (T2), in comparison with an amplifier arrangement without said reactance circuit. The circuit is very suitable for integration in BICMOS technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile