The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Jun. 01, 1990
Applicant:
Inventors:
Michael A Kinch, Dallas, TX (US);
Arturo Simmons, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 37 ; 437 53 ; 437 70 ; 437185 ; 357 24 ;
Abstract
The disclosure relates to oxide-semiconductor interfaces which are grown with varying amounts of fixed positive (or negative) charge. The invention utilizes these different values to form a channel stop for a charge transfer device. For HgCdTe two different oxides are used, namely, those produced by wet anodization (having large values of fixed positive charge) and plasma oxidation (having low values of fixed charge). The voltage range of operation of the active gate is determined by the difference in fixed positive charge for these regions and the insulator thicknesses.