The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 1991

Filed:

Jun. 28, 1988
Applicant:
Inventors:

Junichi Hattori, Tokyo, JP;

Koichiro Takahata, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C / ;
U.S. Cl.
CPC ...
156645 ; 156662 ;
Abstract

A silicon wafer in which a plurality of semiconductor devices are to be formed is disclosed. The silicon wafer has a convex front surface before a process step for forming the semiconductor devices is conducted. The shape of the convex is designed such that during process steps to form and to complete the semiconductor devices in the silicon wafer, the shape of the front surface usually maintains convex conditions without changing to a concave condition.


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