The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 1991

Filed:

Jun. 15, 1989
Applicant:
Inventors:

Frank Chen, Swindon, GB;

Tony W Rogers, Stoke Pages, GB;

David E Blackaby, West Suffield, CT (US);

Assignee:

Hamilton Standard Controls, Inc., Farmington, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ; G01L / ;
U.S. Cl.
CPC ...
357 73 ; 361283 ; 73718 ; 73724 ; 357 26 ; 357 55 ;
Abstract

A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.


Find Patent Forward Citations

Loading…