The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1991
Filed:
Oct. 31, 1990
Tetsuo Ishii, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A Hall element and an amplifier for amplifying an output generated from the Hall element are formed in a GaAs substrate. The Hall element has a current path extending at an angle of 45.degree..+-.10.degree. to a cleavage direction of a GaAs wafer from which the GaAs substrate is formed. The amplifier comprises amplifying FETs for receiving the output generated from the Hall element, each of which has a current path extending in the direction of a crystal axis <011>.+-.10.degree.. The amplifier further comprises other semiconductor elements such as FETs and resistors, each of which has a current path extending in parallel with a dicing line, that is, extending at an angle of .+-.45.degree. to a cleavage direction of a GaAs wafer from which the GaAs substrate is formed.