The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1991
Filed:
May. 02, 1990
Fabio Gualandris, Bergamo, IT;
Aldo Maggis, Vimercate, IT;
Abstract
A surface field effect integrated transistor has the surface of the silicon in the source and drain areas lowered by 50-500 nm in respect to the surface of the silicon underneath the gate electrode by etching the silicon substrate before forming the source and drain junctions. The transistor is sturdy and reliable because of the backing-off of the multiplication zone of the charge carriers from the gate oxide by a distance greater than several times the mean free path of hot carriers, thus markedly reducing the number of hot carriers available for injection in the gate oxide. The modified fabrication steps are readily integrable in a normal CMOS fabrication process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile