The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1991
Filed:
Sep. 07, 1989
Shunpei Yamazaki, Tokyo, JP;
Mitsunori Tsuchiya, Atsugi, JP;
Shigenori Hayashi, Atsugi, JP;
Naoki Hirose, Atsugi, JP;
Noriya Ishida, Atsugi, JP;
Mari Sasaki, Atsugi, JP;
Atsushi Kawano, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Abstract
Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.