The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1991
Filed:
Mar. 22, 1990
Applicant:
Inventors:
Hiromitsu Ishii, Tokorozawa, JP;
Tsuneharu Takeda, Hamura, JP;
Kyuya Baba, Hachioji, JP;
Ikuhiro Yamaguchi, Hamura, JP;
Assignee:
Casio Computer Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419215 ; 2041922 ;
Abstract
Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.
Ishii, Hiromitsu. (1991). Method of manufacturing crystalline thin-film of rare-earth compounds (U.S. Patent No. 5041200). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5041200
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile