The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1991
Filed:
Dec. 12, 1989
Applicant:
Inventor:
Ivo J Raaijmakers, San Jose, CA (US);
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 68 ; 357 65 ; 357 67 ;
Abstract
The invention relates to a semiconductor device comprising a silicon body (1) provided with a conductor pattern (4, 5) consisting of a contact layer (4) and an aluminium layer (5). Contact layers (4), such as those of hafnium, titanium and zirconium, are reactive when they are in contact both with silicon and with aluminum. The silicon body (1) is contacted with a conductor pattern (2, 3), which forms a barrier with respect to silicon migration and the conductor pattern (2, 3) is contacted with the aforementioned conductor pattern (4, 5).