The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1991
Filed:
Jun. 20, 1990
Applicant:
Inventors:
Masahiro Noguchi, Ushiku, JP;
Toshihiko Ibuka, Ushiku, JP;
Assignees:
Mitsubishi Monsanto Chemical Company, Tokyo, JP;
Mitsubishi Kasei Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B05D / ;
U.S. Cl.
CPC ...
357 52 ; 357 17 ; 357 55 ; 357 72 ; 427 50 ; 427 51 ; 437235 ; 437241 ; 437243 ;
Abstract
According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.