The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1991
Filed:
Apr. 03, 1990
Henricus G Maas, Eindhoven, NL;
Roland A Van Es, Eindhoven, NL;
Johannes W Van Der Velden, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor body (10) has at one major surface (15) a step (14) defining a device area (13) of the semiconductor body above a buried region (12) provided within the semiconductor body (10). A protective insulating layer (24) is provided on a side wall (14a) of the step (14) and an insulating region (22) on an area (15a) of the one major surface adjoining the side wall (14a) of the step. Silicon is deposited over the one surface (15) with the anti-oxidation layer (24) on the side wall (14a) of the step (14) to define over the area (15a) of the one surface (15) an intermediate silicon region (23c) which is isolated from the side wall (14a) of the step and which leaves a window area (14'a) of the side wall (14a) exposed. The protective insulating layer (24a) is then removed from the window area (14'a) of the side wall (14a). A silicon region (25c) doped with impurities is defined over the insulating region (22) and adjoining the side wall (14a) of the step (14), and the dopant impurities caused to diffuse from the doped silicon region (25c) into the device area (13) via the window area (14'a) to define a contact region (28) for contacting a device region (29) within the device area (13).