The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1991
Filed:
Jun. 19, 1990
Applicant:
Inventors:
Koichi Kishi, Kawasaki, JP;
Soichi Sugiura, Yamato, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 48 ; 357-4 ; 357 50 ; 357 59 ;
Abstract
A p-type impurity diffusion layer is formed in a major surface region of an n-type silicon substrate. An insulating film is formed on the substrate, and a contact hole is formed in the insulating film at a position corresponding to the impurity diffusion layer. An n-type polysilicon layer is formed inside the contact hole. The p-type impurity diffusion layer and the n-type polysilicon layer constitute a diode. A p-n junction of the diode is formed on the major surface of the substrate or in the polysilicon layer above the major surface.