The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1991
Filed:
Jan. 03, 1990
Seiji Kojima, Tokyo, JP;
Masakiyo Ikeda, Yokoyama, JP;
Hiroshi Kikuchi, Tokyo, JP;
Yuzo Kashiwayanagi, Yokosuka, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
Doped thin films of GaAs are chemically vapor deposited by depositing a high resistant buffer layer of GaAs on a GaAs substrate by gaseous reaction of a mixture of arsine gas and trimethylgallium in the gas phase over the substrate while the temperature of the substrate is maintained within the range of 600.degree.-700.degree. C., stopping the supply of trimethylgallium to the gas mixture undergoing reaction and increasing the temperature of the substrate to within the range of 700.degree.-800.degree. C., and then resuming the supply of trimethylgallium to and supplying hydrogen sulfide to the gas phase over the substrate at the stated temperature, thereby depositing a doped GaAs layer over the buffer layer on the substrate having a distribution of carrier density of less than 5%.