The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1991
Filed:
Aug. 02, 1990
Applicant:
Inventor:
Yuzo Mori, Katano, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427 451 ;
Abstract
A film forming method and an apparatus therefor, in which reactant gas and carrier gas set in 10 torr through several atms very higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby high-speed forming a thin film thereon.
Quick Actions:
Mori, Yuzo. (1991). High-speed film forming method by microwave plasma chemical vapor (U.S. Patent No. 5037666). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5037666
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