The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1991
Filed:
Mar. 20, 1990
Applicant:
Inventor:
Pham N Tung, Paris, FR;
Assignee:
Thomson Composants Microondes, Puteaux, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 1566611 ; 156662 ; 437 41 ; 357 239 ;
Abstract
Disclosed is a device enabling a transistor of submicronic gate length to be constructed using optical means of masking. The process includes a stage during which a resin, deposited on a wafer of semiconducting materials, is etched in order to isolate a pattern as a future gate mask. The mask is eroded, and a layer of silica deposited. Because of the erosion, the sides of the pattern and of the mask are inclined. After etching of the layer of silica and the masking resin, there remain therefore two silica masks whose sloping sides leave a submicronic aperture, through which the gate is deposited.