The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1991
Filed:
Sep. 10, 1990
Toshiyuki Ohishi, Amagasaki, JP;
Yuji Abe, Amagasaki, JP;
Hiroshi Sugimoto, Amagasaki, JP;
Ken-ichi Ohisuka, Amagasaki, JP;
Teruhito Matsui, Amagasaki, JP;
Abstract
An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier concentration lower than that of the base layer, and a thickness so that the whole spacer layer becomes a depletion layer at thermal equillibrium so that a neutral region is produced in the spacer layer at a voltage lower than the threshold voltage of the emitter-base junction. Thus, the same element is both bistable with the base current as a parameter and has an S-shaped negative differential resistance with the base voltage as a parameter.