The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1991
Filed:
Jun. 13, 1990
Hiroyuki Yamane, Anjo, JP;
Yasushi Higuchi, Kariya, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A method of producing a MIS transistor such as a MOS transistor has a P type and an N type channel transistors. P type and N type well regions are provided with the N type and the P type channel transistors, respectively. Both the P type and the N type well regions are covered with an insulating film on which gate electrodes are formed in a predetermined pattern by means of a photo-resist. This photo-resist is used as a channelling block layer when an N type impurity is implanted into the P type well region near the gate electrode so as to form an N type diffusion layer. As a result, the photo-resist prevents the N type impurity from channelling into the gate electrode so that a leak current does not occur within the P type well region of the N type channel transistor.