The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1991
Filed:
Nov. 27, 1989
Minoru Noda, Itami, JP;
Abstract
A method of making a field effect transistor includes forming an active layer in a semiconductor substrate, forming a gate material on a portion of the surface as an ion implantation mask, implanting dopant ions to form a source region, depositing a first mask over the source region and a portion of the gate material, and removing the unmasked gate material to define a gate electrode. A second mask is deposited adjacent the gate electrode opposite the source region, and dopant impurities are implanted to form a drain region using the mask. The source and drain regions are asymmetrically doped and the gate electrode is asymmetrically disposed relative to the source and drain regions in the self-aligning process.