The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1991
Filed:
Dec. 18, 1989
Norman W Parker, Westlake Village, CA (US);
William P Robinson, Newbury Park, CA (US);
Robert L Piccioni, Thousand Oaks, CA (US);
MicroBeam, Inc., Newbury Park, CA (US);
Abstract
Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.