The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1991
Filed:
Mar. 13, 1990
Yoshito Seiwa, Itami, JP;
Abstract
A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the side walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.