The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 1991

Filed:

Nov. 21, 1988
Applicant:
Inventor:

Jimmy C Black, Durham, NC (US);

Assignee:

Harris Corporation, Melbourne, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 54 ; 357-4 ; 357 52 ;
Abstract

The conducting layer, such as polysilicon, which electrically connects spaced apart semiconductor islands of a semiconductor-on-insulator, such as sapphire, integrated circuit device is further spaced from the base, sides and upper edges of the islands (identified as sites for origination of undesirable leakage currents during operation) by an underlying insulating layer which may include silicon oxide with a dopant such as phosphorus or boron. During processing, the islands provide a self-masking effect when illumination is first passed through the sapphire substrate to expose photoresist. Refraction of the illumination around the upper edges of the islands provides a convenient way to form the insulating layer so that it lips over the edges and slightly onto the top of the islands.


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