The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1991
Filed:
May. 11, 1989
Akira Matsuzawa, Neyagawa, JP;
Haruyasu Yamada, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The invention relates to a BIMOS logic gate comprising: a bipolar transistor; and depletion type MOS transistors whose sources are connected to a base of the bipolar transistor or MOS transistors having a threshold voltage smaller than that of MOS transistors constructing another complementary type logic circuit. A current of the bipolar transistor flows at an input voltage lower than that of the related art BIMOS logic gate and the current can be cut off by an input voltage which is equal to that of the ordinary complementary type logic circuit. Thus, the gate operates at a low electric power and can operate at a high speed at a low power source voltage.