The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1991
Filed:
May. 19, 1988
Applicant:
Inventor:
Shin-ichi Imai, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
377 60 ; 377 58 ; 307353 ; 307482 ; 307578 ; 357 24 ;
Abstract
In a charge transfer device, the threshold voltage of a drive MOS transistor in an output circuit is set to be largest among those of MOS transistors of the same conductivity type which are formed on a substrate. Even under a large reset pulse, the MOS transistor is operable in a saturation region, because its threshold voltage is set to be large.