The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1991
Filed:
Feb. 09, 1990
Minoru Noda, Itami, JP;
Abstract
A production method of a semiconductor device includes a first process for producing a gate electrode pattern of double layer structure on a semiconductor substrate, which gate electrode pattern comprises a first layer and a second upper heat-resistant material layers each having different etching property, a second process for plating a resist film on the entire surface of the substrate and etching the same to expose the top portion of the second upper heat-resistant material layer, a third process for removing the second upper heat-resistant material layer, a fourth process for hardening the surface of the resist and conducting over development of the resist, and a fifth process for plating a low resistance metal material on the entire surface of the substrate and removing the low resistance metal material together with the resist film by lift-off method, thereby to produce a gate electrode comprising the first lower heat-resistant material layer and a low resistance metal layer which is produced thereon, wherein the low resistance metal layer has a larger width than that of the first lower heat-resistant material layer.