The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1991
Filed:
Mar. 14, 1990
Gerard Le Roux, La Tronche, FR;
Michel Barou, Voreppe, FR;
SGS-Thomson Microelectronics S.A., Gentilly, FR;
Abstract
In a circuit comprising a power MOS transistor (MP) connected to an inductive load (L), the gate (GP) of the power MOS transistor is connected, on the one hand, to a voltage booster circuit (3) and, on the other hand, to the drain (DL) of a logic MOS transistor (ML). A control circuit (56) fed by the supply source has an output (63) connected to the gate (GL) of the logic MOS transistor. Means are provided for limiting the source voltage of the logic MOS transistor to a voltage lower than the supply voltage (VCC) minus a predetermined threshold voltage when the power MOS transistor is conductive. The control circuit is then capable of controlling the switching of the logic MOS transistor with the supply voltage available at the supply source.