The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1991
Filed:
Mar. 20, 1990
Yuzo Sakurada, Kanagawa, JP;
Osamu Tsukakoshi, Hiratsuka, JP;
Nihon Shinku Gijutsu Kabushiki Kaisha, Chigasaki, JP;
Abstract
An ion implanation apparatus comprises a first multipole electrostatic deflector and a second multipole electrostatic deflector. The first multipole electrostatic deflector comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam at the predetermined angle and voltage for simultaneously sweeping the ion beam in X and Y directions are applied. The second multipole electrostatic deflector is disposed around a second optical axis starting from the center of the first deflector and directed towards a line which makes the predetermined angle with the axis of the first deflector, and comprises the same number of electrodes as the first deflector equally spaced around the second optical axis, to each of which voltage for sweeping the ion beam in X and Y directions are applied so that the ion beam is implanted on the target(s) at a constant angle therewith while keeping the direction of incidence of the ion beam parallel with the second optical axis.