The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1991
Filed:
Nov. 06, 1990
Applicant:
Inventors:
William E O'Mara, Jr, Kingston, NH (US);
Gregory A Schrantz, Melbourne, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 65 ; 357 59 ; 357 88 ; 357 71 ; 437186 ;
Abstract
A polycrystalline silicon layer forms an Ohmic contact to a group III-arsenide compound semiconductor substrate by heating the substrate. The polysilicon contact out-diffuses silicon into the substrate to form an N++ region.
O'Mara, Jr, William. (1991). Polycrystalline silicon ohmic contacts to group iii-arsenide compound (U.S. Patent No. 5027187). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5027187
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile