The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1991
Filed:
Oct. 11, 1990
Jae H Kim, Arcadia, CA (US);
Steven H Lin, Temple City, CA (US);
Abstract
High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) (14) and Darlington phototransistor pairs (14, 16) are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base (22) doping level used herein results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransistor pairs of this material can achieve a current gain of over 6,000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ novel neurons (10) comprising the Darlington phototransistor pair in series with a light source (12).