The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1991
Filed:
Oct. 13, 1989
Applicant:
Inventors:
Masahito Migita, Hachioji, JP;
Osamu Kanehisa, Kodaira, JP;
Masatoshi Shiiki, Musashimurayama, JP;
Hajime Yamamoto, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 437 94 ; 437916 ; 437959 ;
Abstract
A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di-.pi.-cyclopentadienyl manganese or di-.pi.-alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there is obtained a manganese-doped zinc chalcogenide having a very high crystal quality, which is very suitable for the active layer in light emitting devices.
Migita, Masahito. (1991). Method of manufacturing zinc chalcogenide semiconductor devices using (U.S. Patent No. 5026661). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5026661
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile