The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1991
Filed:
Sep. 06, 1989
Applicant:
Inventors:
Bulusu V Dutt, Yorktown Heights, NY (US);
Peter G Abbott, Greenwich, CT (US);
Assignee:
Codenoll Technology Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 80 ; 148D / ; 148D / ; 437-3 ; 437187 ; 437924 ;
Abstract
A shadow-masking process for manufacturing low dark current photodetectors with low noise characteristics is disclosed. The process includes shadow-masking a semiconductor wafer by positioning a patterned shadow-mask on a surface of the wafer. The shadow-mask is patterned with, for example, circular openings or stripe openings. Layers, such as metallization layers to form metallic contacts or anti-reflection layers are deposited onto the wafer through the patterned openings in the shadow-masks. This shadow-masking process may be used in the production of any semiconductor device requiring patterned layers.