The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1991
Filed:
Jul. 16, 1990
Applicant:
Assignee:
Goldstar Electron Co., Cheongji, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437 53 ;
Abstract
This invention relates to a method of forming a charge coupled device (CCD) channel which has a trench-type multi-potential profile. To form the multi-potential profile, ion implantation is performed several times with a self-alignment mask using a polysilicon layer. This method simplifies the fabrication process and prevents charges from diffusing over the entire CCD channel laterally when the amount of charge is small. This results in charge confinement in a trench in the middle of the channel, enhancing self-induced field and fringing field. Consequently, charge transfer efficiency is improved for small amount of charge.