The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Jun. 15, 1990
Albrecht Helmut, Munich, DE;
Christl Lauterbach, Siegertsbrunn, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A PIN-FET combination having a basic layer, a first semiconductor layer as an absorption layer or, resepectively, a buffer layer, a second semiconductor layer as a contact layer or, respectively, as a channel layer and a third semiconductor layer as a cover layer grown surface-wide on a substrate. The p.sup.+ -region of the photodiode and, respectively, the gate region of the FET being fashioned therein. The basic layer is undoped or n-doped in the region of the photodiode and is p-doped in the region of the FET and a surface-wide, p-doped layer portion is present in the region of the FET between the channel layer and the substrate.