The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Dec. 16, 1987
Applicant:
Inventor:
Dean W Freeman, San Diego, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C23C / ;
U.S. Cl.
CPC ...
437228 ; 437235 ; 437238 ; 437239 ; 156625 ; 156646 ; 156653 ; 148D / ;
Abstract
A semiconductor device is disclosed in which a deposited non-oxide layer (44) overlies and physically contacts another non-oxide layer (38) so that no intervening oxide layer is present. The device is fabricated by performing an insitu etch and deposition process. In one embodiment, the device (36) is sealed in a LPCVD chamber (10) and etched using gaseous anhydrous hydrofluoric acid to remove an oxide (40) from one non-oxide layer (38). Then, without exposing the device to a water rinse or to the atmosphere, a chemical vapor deposition process applies the deposited layer (44) upon the other layer (38).