The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Aug. 15, 1990
Applicant:
Inventors:
Michel Haond, Meylan, FR;
Jean Galvier, Gieres, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 41 ; 437 62 ; 437 63 ; 437 64 ; 437 83 ; 437200 ; 437228 ; 437233 ; 148D / ; 148D / ;
Abstract
A method for manufacturing a MOS transistor formed in a silicon block on insulator with convex rounded up edges, initially consisting in etching the block in a thin layer of silicon on insulator (SOI). In this method etching of the block comprises the following steps: forming at the position where it is desired to obtain the block a mask layer portion (3) having a thickness slightly higher than that of the SOI; depositing a second silicon layer (11) having a predetermined thickness; and anisotropically etching silicon until said insulator is apparent outside the mask layer portion.