The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Oct. 03, 1988
Applicant:
Inventors:
Juliana Manoliu, Palo Alto, CA (US);
Prateep Tuntasood, San Jose, CA (US);
Assignee:
National Semiconductor Corp., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 34 ; 437 57 ; 437 26 ; 437985 ; 357 43 ;
Abstract
A process is disclosed for simultaneously fabricating bipolar and complementary field effect transistors. The process includes the fabrication of buried layers 18 doped with both phosphorus and arsenic to permit a shorter diffusion time while simultaneously providing buried layers having low resistance and high diffusivity. The process enables fabrication of BiCMOS structures using only six masks prior to the contact mask.
Manoliu, Juliana. (1991). Method for simultaneously fabricating bipolar and complementary field (U.S. Patent No. 5023193). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5023193
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile