The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Sep. 13, 1990
Wilhelmus J Josquin, Eindhoven, NL;
Jan Van Dijk, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A first device region (20) of one conductivity type is provided adjacent one major surface (11) of a semiconductor body (10). A layer (30) doped with impurities of the opposite conductivity type is provided on the one major surface (11) for forming an extrinsic subsidiary region (41) of a second device region (40) of the opposite conductivity type. An opening (31) is formed through the doped layer (30). Impurities for forming a coupling region (43) of the opposite conductivity type are introduced through the opening (31) prior to defining an insulating first portion (50) on the side wall (32) of the doped layer (30) to form a first window (80). Impurities for forming an intrinsic subsidiary region (42) of the second device region (40) are introduced through the first window (80). A second portion (60) is then defined on the insulating first portion (50) to form a smaller second window (90), and impurities for forming a third device region (70) through the second window (90) so that the extrinsic subsidiary region (41) and third device region are well spaced whilst the coupling region (43) enables good connection between the extrinsic and intrinsic subsidiary regions (41 and 42).