The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 1991

Filed:

Sep. 10, 1990
Applicant:
Inventor:

Eric M Bradley, San Diego, CA (US);

Assignee:

General Dynamics Corp., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ;
U.S. Cl.
CPC ...
372 75 ; 372 29 ; 372 32 ; 372 50 ; 372 96 ;
Abstract

A semiconductor diode laser is aligned to a waveguide with two sections, a first section being a passive low-loss waveguide and a second section being a Bragg grating. The first section works to increase the total cavity length l of the laser by about 1 to 2 cm. The lengthening of the cavity reduces the longitudinal mode spacing .DELTA..lambda. according to the equation .DELTA..lambda.=.lambda..sup.2 /2nl, and provides a higher average output power level because it is substantially immune to mode hop-induced fluctuations. The second section causes the output to be centered at the desired wavelength depending on the grating spacing. An array of diode lasers with an array of waveguides as described above provides a high power source with a controlled bandwidth. The high power laser array with stabilized output wavelength is used to pump a solid state laser crystal.


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