The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1991
Filed:
Jan. 17, 1990
Jun-ichi Ohwada, Hitachi, JP;
Masaaki Kitajima, Hitachiohta, JP;
Masayoshi Suzuki, Hitachiohta, JP;
Masaru Takabatake, Hitachi, JP;
Yoshiharu Nagae, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A high-speed scanning method uses a K(K.gtoreq.3)-number of semiconductor switch elements each having a first main electrode responsive to an input signal, a second main electrode, and a control electrode responsive to a control signal for controlling the transmissive and intransmissive states of said input signal from the first main electrode to the second main electrode; and capacitive loads connected respectively with the second main electrode of each of said K-number of semiconductor switch elements, for shifting one of the K-number of semiconductor switch elements sequentially with a predetermined period from the transmissive state to the intransmissive state or vice versa, wherein, the time, for which an arbitary L(K>L.gtoreq.2)-number of semiconductor switch elements of adjacent scans are rendered transmissive, and the time, for which the L-number of semiconductor switch elements are rendered intransmissive, are included in at least one frame period, to elongate the period for which the scanning signals fluctuate, thereby permitting use of low-frequency semiconductor switches.