The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1991
Filed:
Nov. 22, 1989
Robert H Isham, Flemington, NJ (US);
Victor Zazzu, Belle Mead, NJ (US);
Harris Semiconductor Patents, Inc., Melbourne, FL (US);
Abstract
A variable impedance element which is utilized to shunt a signal and control the amplitude of the signal utilizes a P-MOS and an N-MOS transistor operated in parallel. Separate control voltages are applied to each device in a direction to lower the impedance of the device with an increase in the peak to peak voltage of the input signal. Thus, by controlling each of the separate shunted transistors from separate peak detectors and according to the polarity of the signal voltage, each transistor will operate somewhat independent from the other to therefore provide accurate gain control and a symmetrical impedance variation.