Two stage address decoder circuit for semiconductor memories

Abstract

A two stage address decoder circuit (AD) for 1/64 decode operation is disclosed which operates at high speed with low power consumption. Briefly stated, the circuit includes a first stage comprised of two predecoder circuits operable to develop predecoded output signals in response to input address signals and corresponding inverted address signals. Each predecoder circuit consists of a lower power high speed Differential Cascode Current Switch tree with its associated current source. The second or final decode stage is comprised of a plurality of final decoding circuits. Each final circuit consisting of a 2 way OR gate dynamically activated through a switched current source. The inputs of the 2 way OR gate are connected to one pair of the predecoded output signals. Final decoder circuits provide final decoded output signals which drive the word lines of a memory cell array. The switched current source is triggered by a control signal supplied by a clock generator (CG) so that the final decode circuits consume power only when the control signal is active.