The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1991
Filed:
Nov. 16, 1989
Applicant:
Inventors:
Mark F Henderson, Kokomo, IN (US);
John R Schlais, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 45 ; 437 46 ; 437 34 ; 437 40 ;
Abstract
A p-channel depletion device in a MOSFET is formed and preferably comprises a silicon substrate, an N-well region, P+ source and drain regions, and a polysilicon gate which has been appropriately doped to be of a P- conductivity type. The resulting structure performs analogously to a depletion device formed in accordance with conventional methods wherein a depletion mask and implant are utilized and are characterized by a threshold voltage of approximately +250 millivolts or greater.