The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1991
Filed:
Oct. 31, 1988
Applicant:
Inventor:
Robert J Huber, Bountiful, UT (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 365184 ; 365228 ; 357 235 ;
Abstract
A silicon substrate with a drain area formed therein is used for the base of the device. A first polysilicon gate is disposed above the substrate with a layer of gate oxide therebetween. Adjacent to the first gate and contiguous to the same plane is a second polysilicon gate. The second gate and the substrate are separated by a layer of tunnel oxide and silicon nitride. The silicon nitride being used to store a charge. The state of the device is determined by the presence of a capacitance in the substrate generated by the charge on the silicon nitride. This device may function as a nonvolatile memory or a dynamic random access memory with the capability of capturing its DRAM state.